超碰老司机导航,久久开心播播网,极品欧美国色麻豆91网 http://m.jiechudian.cn/en Wed, 25 Dec 2024 09:44:17 +0000 en-US hourly 1 https://wordpress.org/?v=6.7.1 http://m.jiechudian.cn/wp-content/uploads/2024/08/站點logo.png N-Channel MOSFET – 湯誠科技 http://m.jiechudian.cn/en 32 32 TCS1800 V1.0 http://m.jiechudian.cn/en/product/tcs1800-v1-0/ Wed, 04 Dec 2024 07:44:56 +0000 http://m.jiechudian.cn/?post_type=product&p=3549 The TCS1800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

]]> TCS1345 http://m.jiechudian.cn/en/product/tcs1345/ Wed, 04 Dec 2024 07:44:52 +0000 http://m.jiechudian.cn/?post_type=product&p=3542 TCS1064 V1.0 http://m.jiechudian.cn/en/product/tcs1064-v1-0/ Wed, 04 Dec 2024 06:24:24 +0000 http://m.jiechudian.cn/?post_type=product&p=3530 TheTCS1064uses advanced trench technologyto provide excellent Ros(on), low gate charge and highdensity cell Design for ultra low on-resistance. This deviceis suitable for use as a load switch or in PWMapplications.

]]> TCS2302-V2.0 http://m.jiechudian.cn/en/product/tcs2302-v2-0/ Wed, 04 Dec 2024 06:14:37 +0000 http://m.jiechudian.cn/?post_type=product&p=3528 The TCS2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

]]> TCS1231 http://m.jiechudian.cn/en/product/tcs1231/ Thu, 21 Nov 2024 02:47:44 +0000 http://m.jiechudian.cn/?post_type=product&p=2844 30V Dual P-Channel Enhancement Mode MOSFET

]]> TCS1340 http://m.jiechudian.cn/en/product/tcs1340/ Thu, 21 Nov 2024 02:06:54 +0000 http://m.jiechudian.cn/?post_type=product&p=2831 30V, 4.7mΩ, 40A, Single N- Channel

]]> TCS1400 http://m.jiechudian.cn/en/product/tcs1400/ Thu, 21 Nov 2024 01:58:30 +0000 http://m.jiechudian.cn/?post_type=product&p=2828 The TCS1400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.

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