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1 https://wordpress.org/?v=6.7.1http://m.jiechudian.cn/wp-content/uploads/2024/08/站點logo.pngMOSFET – 湯誠科技
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3232TCS1800 V1.0
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Wed, 04 Dec 2024 07:44:56 +0000http://m.jiechudian.cn/?post_type=product&p=3549The TCS1800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.]]>TCS1345
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Wed, 04 Dec 2024 07:44:52 +0000http://m.jiechudian.cn/?post_type=product&p=3542TCS1064 V1.0
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Wed, 04 Dec 2024 06:24:24 +0000http://m.jiechudian.cn/?post_type=product&p=3530TheTCS1064uses advanced trench technologyto provide excellent Ros(on), low gate charge and highdensity cell Design for ultra low on-resistance. This deviceis suitable for use as a load switch or in PWMapplications.]]>TCS2302-V2.0
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Wed, 04 Dec 2024 06:14:37 +0000http://m.jiechudian.cn/?post_type=product&p=3528The TCS2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.]]>TCS1705
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Wed, 04 Dec 2024 06:10:25 +0000http://m.jiechudian.cn/?post_type=product&p=3529The TCS1705 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.]]>TCS1054-V2.0
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Wed, 04 Dec 2024 02:27:57 +0000http://m.jiechudian.cn/?post_type=product&p=3527The TCS1054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.]]>TCS1221
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Wed, 04 Dec 2024 02:07:24 +0000http://m.jiechudian.cn/?post_type=product&p=3526The TCS1221 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.]]>