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1 https://wordpress.org/?v=6.7.1http://m.jiechudian.cn/wp-content/uploads/2024/08/站點(diǎn)logo.png20v mos – 湯誠(chéng)科技
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3232TCS1054-V2.0
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Wed, 04 Dec 2024 02:27:57 +0000http://m.jiechudian.cn/?post_type=product&p=3527The TCS1054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.]]>TCS1221
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Wed, 04 Dec 2024 02:07:24 +0000http://m.jiechudian.cn/?post_type=product&p=3526The TCS1221 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.]]>TCS1273
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Thu, 21 Nov 2024 02:26:47 +0000http://m.jiechudian.cn/?post_type=product&p=2838The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.]]>TCS1702
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Thu, 21 Nov 2024 02:21:00 +0000http://m.jiechudian.cn/?post_type=product&p=2834The TCS1702 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.]]>